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HGT1S12N60A4DS Vipimo vya teknolojia

HGT1S12N60A4DS datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Sifa ya Bidhaa Thamani ya Sifa
Category Vipitio Vipande / IGBTs Moja
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 167W
Peak Reflow Temperature (Cel) 260
Base Part Number HGT1S12N60
Number of Elements 1
Power Dissipation 167W
Input Type Standard
Transistor Application POWER CONTROL
Turn-Off Delay Time 96 μs
Max Collector Current 54A
Collector Emitter Breakdown Voltage 600V
Turn On Time 33 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Gate Charge 78nC
Td (on/off) @ 25°C 17ns/96ns
Radiation Hardening No
Lead Free Lead Free
Sifa ya Bidhaa Thamani ya Sifa
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.31247g
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 2
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 17 μs
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 30ns
Collector Emitter Saturation Voltage 2.7V
Test Condition 390V, 12A, 10 Ω, 15V
Turn Off Time-Nom (toff) 180 ns
Current - Collector Pulsed (Icm) 96A
Switching Energy 55μJ (on), 50μJ (off)
RoHS Status ROHS3 Compliant
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