- Bidhaa Zote
- Vipitio Vipande
- IGBTs Moja
-
HGT1S10N120BNST
Katika Hisa
Dak. : 1
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HGT1S10N120BNST Vipimo vya teknolojia
HGT1S10N120BNST datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip
Sifa ya Bidhaa | Thamani ya Sifa |
---|---|
Category | Vipitio Vipande / IGBTs Moja |
Manufacturer | ON Semiconductor |
Factory Lead Time | 3 Weeks |
Factory Lead Time | 4 Weeks |
Mount | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Weight | 1.31247g |
Operating Temperature | -55°C~150°C TJ |
Published | 2017 |
Pbfree Code | yes |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 298W |
Current Rating | 35A |
JESD-30 Code | R-PSSO-G2 |
Rise Time-Max | 15ns |
Power Dissipation | 298W |
Input Type | Standard |
Polarity/Channel Type | N-CHANNEL |
Max Collector Current | 35A |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Max Breakdown Voltage | 1.2kV |
Test Condition | 960V, 10A, 10 Ω, 15V |
Continuous Collector Current | 55A |
IGBT Type | NPT |
Current - Collector Pulsed (Icm) | 80A |
Switching Energy | 320μJ (on), 800μJ (off) |
Fall Time-Max (tf) | 200ns |
Length | 10.67mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Sifa ya Bidhaa | Thamani ya Sifa |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Mounting Type | Surface Mount |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Packaging | Tape & Reel (TR) |
JESD-609 Code | e3 |
Part Status | Active |
Number of Terminations | 2 |
Terminal Finish | Tin (Sn) |
HTS Code | 8541.29.00.95 |
Voltage - Rated DC | 1.2kV |
Terminal Form | GULL WING |
Base Part Number | HGT1S10N120 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Transistor Application | MOTOR CONTROL |
Collector Emitter Voltage (VCEO) | 1.2kV |
Collector Emitter Breakdown Voltage | 1.2kV |
Collector Emitter Saturation Voltage | 2.7V |
Turn On Time | 32 ns |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
Turn Off Time-Nom (toff) | 330 ns |
Gate Charge | 100nC |
Td (on/off) @ 25°C | 23ns/165ns |
Gate-Emitter Voltage-Max | 20V |
Height | 4.83mm |
Width | 9.65mm |
REACH SVHC | No SVHC |
Lead Free | Lead Free |
HGT1S10N120BNST Nyaraka
Pakua hifadhidata na nyaraka za mtengenezaji kwa HGT1S10N120BNST
-
Laha za data
Wengine ni pamoja na "HGT1S" sehemu
Sehemu zifuatazo ni pamoja na 'HGT1S'
Sehemu # | Mtengenezaji | Kategoria | Upatikanaji |
---|---|---|---|
HGT1S10N120BNS | AMI Semiconductor / ON Semiconductor | Transistors - IGBTs - Moja | 3141 |
HGT1S10N120BNS | Fairchild/ON Semiconductor | Transistors - IGBTs - Moja | 1180 |
HGT1S10N120BNS | ON Semiconductor | IGBTs Moja | |
HGT1S10N120BNST | AMI Semiconductor / ON Semiconductor | Transistors - IGBTs - Moja | 3181 |
HGT1S10N120BNST | Fairchild/ON Semiconductor | Transistors - IGBTs - Moja | 5213 |
HGT1S10N120BNST##QQQQQQQQ | AMI Semiconductor / ON Semiconductor | Maalum Moto ICs | 647 |
HGT1S12N60A4DS | AMI Semiconductor / ON Semiconductor | Transistors - IGBTs - Moja | 2995 |
HGT1S12N60A4DS | Fairchild/ON Semiconductor | Transistors - IGBTs - Moja | 578 |
HGT1S12N60A4DS | ON Semiconductor | IGBTs Moja | |
HGT1S12N60A4S9A | AMI Semiconductor / ON Semiconductor | Transistors - IGBTs - Moja | 2687 |
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Mita za Mvuke
HGT1S10N120BNST watengenezaji chapa: ON Semiconductor, Bonchip hisa, HGT1S10N120BNST bei ya kumbukumbu. HGT1S10N120BNST vigezo, HGT1S10N120BNST Datasheet PDF na pini mchoro maelezo download.Unaweza kutumia HGT1S10N120BNST Viunganishi Vinavyozimika, Laha ya Tarehe ya DSP, pata HGT1S10N120BNST mchoro wa pini na mchoro wa mzunguko na njia ya matumizi ya kazi, HGT1S10N120BNST elektroniki tutorials.Unaweza kupakua kutoka Bonchip.
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