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HGT1S10N120BNS Vipimo vya teknolojia

HGT1S10N120BNS datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Bonchip

Sifa ya Bidhaa Thamani ya Sifa
Category Vipitio Vipande / IGBTs Moja
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 44 Weeks
Mount Surface Mount, Through Hole
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.31247g
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 2
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Max Power Dissipation 312W
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Voltage 1.2kV
Current 35A
Case Connection COLLECTOR
Transistor Application MOTOR CONTROL
Collector Emitter Voltage (VCEO) 1.2kV
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2.7V
Turn On Time 32 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Turn Off Time-Nom (toff) 330 ns
Gate Charge 100nC
Td (on/off) @ 25°C 23ns/165ns
Height 4.83mm
Width 9.65mm
RoHS Status ROHS3 Compliant
Sifa ya Bidhaa Thamani ya Sifa
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 day ago)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 1.2kV
Terminal Form GULL WING
Current Rating 35A
Base Part Number HGT1S10N120
Number of Elements 1
Element Configuration Single
Power Dissipation 298W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 35A
Voltage - Collector Emitter Breakdown (Max) 1200V
Max Breakdown Voltage 1.2kV
Test Condition 960V, 10A, 10 Ω, 15V
Continuous Collector Current 55A
IGBT Type NPT
Current - Collector Pulsed (Icm) 80A
Switching Energy 320μJ (on), 800μJ (off)
Length 10.67mm
Radiation Hardening No
Lead Free Lead Free
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