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SGS10N60RUFDTU Vipimo vya teknolojia

IGBT 600V 16A 55W TO220F

Sifa ya Bidhaa Thamani ya Sifa
Category Vipitio Vipande / IGBTs Moja
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 11 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Operating Temperature -55°C~150°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 55W
Base Part Number SG*10N60
Element Configuration Single
Case Connection ISOLATED
Transistor Application MOTOR CONTROL
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 60ns
Collector Emitter Saturation Voltage 2.2V
Test Condition 300V, 10A, 20 Ω, 15V
Turn Off Time-Nom (toff) 284 ns
Current - Collector Pulsed (Icm) 30A
Switching Energy 141μJ (on), 215μJ (off)
Gate-Emitter Thr Voltage-Max 8V
Radiation Hardening No
Lead Free Lead Free
Sifa ya Bidhaa Thamani ya Sifa
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 13 hours ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Current Rating 10A
Number of Elements 1
Power Dissipation 55W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Max Collector Current 16A
Collector Emitter Breakdown Voltage 600V
Turn On Time 49 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 10A
Gate Charge 30nC
Td (on/off) @ 25°C 15ns/36ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 220ns
RoHS Status ROHS3 Compliant
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