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NTQD6968NR2 Vipimo vya teknolojia

MOSFET 2N-CH 20V 6.2A 8TSSOP

Sifa ya Bidhaa Thamani ya Sifa
Category Vipitio Vipande / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e0
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 20V
Terminal Form GULL WING
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 30
Qualification Status Not Qualified
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Power Dissipation 1.81W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 6.2A
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 20V
FET Feature Logic Level Gate
Lead Free Contains Lead
Sifa ya Bidhaa Thamani ya Sifa
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2006
Part Status Obsolete
Number of Terminations 8
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory FET General Purpose Power
Max Power Dissipation 1.39W
Peak Reflow Temperature (Cel) 240
Current Rating 7A
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 22m Ω @ 7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 630pF @ 16V
Rise Time 25ns
Turn-Off Delay Time 60 ns
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.03Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status Non-RoHS Compliant
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