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FQPF3N25 Vipimo vya teknolojia

MOSFET N-CH 250V 2.3A TO-220F

Sifa ya Bidhaa Thamani ya Sifa
Category Vipitio Vipande / Transistors za MOSFET Moja
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mount Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Power Dissipation 27W
Turn On Delay Time 6.6 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 2.3A Tc
Rise Time 25ns
Vgs (Max) ±30V
Turn-Off Delay Time 5.5 ns
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 9.2A
Radiation Hardening No
Lead Free Lead Free
Sifa ya Bidhaa Thamani ya Sifa
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series QFET®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.29.00.95
Voltage - Rated DC 250V
Current Rating 2.3A
Power Dissipation-Max 27W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.2 Ω @ 1.15A, 10V
Input Capacitance (Ciss) (Max) @ Vds 170pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 20 ns
Continuous Drain Current (ID) 2.3A
Drain to Source Breakdown Voltage 250V
Avalanche Energy Rating (Eas) 40 mJ
RoHS Status ROHS3 Compliant
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