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FDS8884 Vipimo vya teknolojia

FDS8884 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Bonchip

Sifa ya Bidhaa Thamani ya Sifa
Category Vipitio Vipande / Transistors za MOSFET Moja
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature FAST SWITCHING
Voltage - Rated DC 30V
Terminal Position DUAL
Current Rating 8.5A
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.5A Ta
Rise Time 9ns
Vgs (Max) ±20V
Turn-Off Delay Time 42 ns
Threshold Voltage 1.7V
Drain-source On Resistance-Max 0.023Ohm
Pulsed Drain Current-Max (IDM) 40A
Height 1.5mm
Width 4mm
REACH SVHC No SVHC
Lead Free Lead Free
Sifa ya Bidhaa Thamani ya Sifa
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Weight 130mg
Operating Temperature -55°C~150°C TJ
Published 2006
JESD-609 Code e4
Part Status Active
Number of Terminations 8
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 23m Ω @ 8.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 635pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 21 ns
Continuous Drain Current (ID) 8.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 32 mJ
Length 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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