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FDMB3900AN Vipimo vya teknolojia

FDMB3900AN datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Bonchip

Sifa ya Bidhaa Thamani ya Sifa
Category Vipitio Vipande / MOSFETs Transistors Arrays
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 23 Weeks
Mount Surface Mount
Package / Case 8-PowerWDFN
Weight 60μg
Operating Temperature -55°C~150°C TJ
Series PowerTrench®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature ULTRA-LOW RESISTANCE
Max Power Dissipation 800mW
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 23m Ω @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 13V
Rise Time 3ns
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 7A
Drain Current-Max (Abs) (ID) 7A
FET Technology METAL-OXIDE SEMICONDUCTOR
Height 750μm
Width 1.9mm
RoHS Status ROHS3 Compliant
Sifa ya Bidhaa Thamani ya Sifa
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Number of Pins 8
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e4
Part Status Active
Number of Terminations 6
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory FET General Purpose Power
JESD-30 Code R-PDSO-N6
Element Configuration Dual
Power Dissipation 1.6W
Turn On Delay Time 6 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drain to Source Voltage (Vdss) 25V
Turn-Off Delay Time 15 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
FET Feature Logic Level Gate
Length 3mm
Radiation Hardening No
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