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IRGS30B60KPBF Vipimo vya teknolojia

IRGS30B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Sifa ya Bidhaa Thamani ya Sifa
Category Vipitio Vipande / IGBTs Moja
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 11 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2005
Part Status Obsolete
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Max Power Dissipation 370W
Peak Reflow Temperature (Cel) 260
Base Part Number IRGS30B60KPBF
Number of Elements 1
Power Dissipation 370W
Input Type Standard
Transistor Application MOTOR CONTROL
Turn-Off Delay Time 185 ns
Max Collector Current 78A
Collector Emitter Saturation Voltage 2.35V
Test Condition 400V, 30A, 10 Ω, 15V
Turn Off Time-Nom (toff) 237 ns
Gate Charge 102nC
Td (on/off) @ 25°C 46ns/185ns
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 42ns
Length 10.668mm
Radiation Hardening No
RoHS Status RoHS Compliant
Sifa ya Bidhaa Thamani ya Sifa
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 46 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.35V
Collector Emitter Breakdown Voltage 600V
Turn On Time 74 ns
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 30A
IGBT Type NPT
Current - Collector Pulsed (Icm) 120A
Switching Energy 350μJ (on), 825μJ (off)
Gate-Emitter Thr Voltage-Max 5.5V
Height 4.699mm
Width 4.83mm
REACH SVHC No SVHC
Lead Free Lead Free
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