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IPT60R050G7XTMA1 Vipimo vya teknolojia

MOSFET N-CH 650V 44A HSOF-8

Sifa ya Bidhaa Thamani ya Sifa
Category Vipitio Vipande / Transistors za MOSFET Moja
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case 8-PowerSFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™ G7
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 245W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 800μA
Current - Continuous Drain (Id) @ 25°C 44A Tc
Drain to Source Voltage (Vdss) 650V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.05Ohm
DS Breakdown Voltage-Min 600V
RoHS Status ROHS3 Compliant
Sifa ya Bidhaa Thamani ya Sifa
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2014
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSSO-F3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 50m Ω @ 15.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2670pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain Current-Max (Abs) (ID) 44A
Pulsed Drain Current-Max (IDM) 135A
Avalanche Energy Rating (Eas) 159 mJ
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IPT60R050G7XTMA1 watengenezaji chapa: Infineon Technologies, Bonchip hisa, IPT60R050G7XTMA1 bei ya kumbukumbu. IPT60R050G7XTMA1 vigezo, IPT60R050G7XTMA1 Datasheet PDF na pini mchoro maelezo download.Unaweza kutumia IPT60R050G7XTMA1 Viunganishi Vinavyozimika, Laha ya Tarehe ya DSP, pata IPT60R050G7XTMA1 mchoro wa pini na mchoro wa mzunguko na njia ya matumizi ya kazi, IPT60R050G7XTMA1 elektroniki tutorials.Unaweza kupakua kutoka Bonchip.
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