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IPB031NE7N3GATMA1 Vipimo vya teknolojia

Trans MOSFET N-CH 75V 100A 3-Pin(2+Tab) TO-263

Sifa ya Bidhaa Thamani ya Sifa
Category Vipitio Vipande / Transistors za MOSFET Moja
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.1m Ω @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds 8130pF @ 37.5V
Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V
Drain to Source Voltage (Vdss) 75V
Vgs (Max) ±20V
Turn-Off Delay Time 40 ns
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 75V
RoHS Status ROHS3 Compliant
Sifa ya Bidhaa Thamani ya Sifa
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 214W Tc
Power Dissipation 214W
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.8V @ 155μA
Current - Continuous Drain (Id) @ 25°C 100A Tc
Rise Time 85ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 100A
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 640 mJ
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