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BSO613SPVGHUMA1 Vipimo vya teknolojia

MOSFET P-CH 60V 3.44A 8DSO

Sifa ya Bidhaa Thamani ya Sifa
Category Vipitio Vipande / Transistors za MOSFET Moja
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Published 1999
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 8
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating -3.44A
Pin Count 8
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
Rds On (Max) @ Id, Vgs 130m Ω @ 3.44A, 10V
Halogen Free Not Halogen Free
Current - Continuous Drain (Id) @ 25°C 3.44A Ta
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 32 ns
Threshold Voltage -3V
Max Dual Supply Voltage -60V
Height 1.75mm
RoHS Status RoHS Compliant
Sifa ya Bidhaa Thamani ya Sifa
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Manufacturer Package Identifier PG-SO 8
Packaging Tape & Reel (TR)
Series SIPMOS®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Voltage - Rated DC -60V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Power Dissipation 2.5W
FET Type P-Channel
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 875pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Continuous Drain Current (ID) -3.44A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
REACH SVHC No SVHC
Lead Free Lead Free
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